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SiC Product Line
SBD
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650V/1200V
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Low Vf 1.2V
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2A/4A/6A/8A/10A/12A
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TO-220/TO-247/DFN-8x8
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650V/1200V/1700V
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Low FoM
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1R/80mR/45mR/25mR/15mR
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TO-247/TO-263/TOLL
SIC LOW F.O.M.
Features
The new third-generation SiC technology platform has established a new quality factor (figures-of-merit, F.O.M.) benchmark for the transistor industry with the latest planar process MOSFET. The industry-recognized F.O.M. quality factor, which is a combination of on-resistance (Ron) x chip size and Ron x gate charge (Qg), represents transistor efficiency, power density, and switching performance. Improving the F.O.M. using conventional silicon technology has become increasingly challenging, hence SiC technology is the key to improving the F.O.M.
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