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SiC Product Line

SBD

  • 650V/1200V

  • Low Vf 1.2V

  • 2A/4A/6A/8A/10A/12A

  • TO-220/TO-247/DFN-8x8

TO-220-2L
TO-220-3L.png
TO-247-2.png
DFN8x8.png
  • 650V/1200V/1700V

  • Low FoM

  • 1R/80mR/45mR/25mR/15mR

  • TO-247/TO-263/TOLL

TO-263-7.png
TOLL8.png
TO-247-3.png
TO-247-4.png

SIC LOW F.O.M.

SIC LOW FOM-20230508-513x428.png
Features

The new third-generation SiC technology platform has established a new quality factor (figures-of-merit, F.O.M.) benchmark for the transistor industry with the latest planar process MOSFET. The industry-recognized F.O.M. quality factor, which is a combination of on-resistance (Ron) x chip size and Ron x gate charge (Qg), represents transistor efficiency, power density, and switching performance. Improving the F.O.M. using conventional silicon technology has become increasingly challenging, hence SiC technology is the key to improving the F.O.M.

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